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MIL-PRF-19500-611 Semiconductor Device, Transistor, Npn, Silicon, Power Switching Types 2N7374, 2N7375, 2N7376, And 2N7377, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power switching applications. Three levels of product assurance are provided as specified in MIL-PRF-19500.

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MIL-PRF-19500/611A
4.4.4 Group E inspection. Group e inspection shall be conducted in accordance with the conditions specified for subgroup testing in
appendix E, table IX of MIL-PRF-19500 Electrical measurements (end points) shall be in accordance with the applicable steps and table
I, group A, subgroup 2 herein except ZθJX shall not be performed.
4.4.4.1 Group E inspection, appendix E, table IX of MIL-PRF-19500.
Subgroup
Method
Condition
Sampling Plan
E1
1051
500 cycles
22 devices, c = 0
E2
1039
Condition A, 500 hours
22 devices, c = 0
E3
Not applicable
E4
3131
See 4.4.1
10 devices, c = 0
2N7374, 2N7376 - VCB = 250V
15 devices, c = 0
E5
1001
2N7375, 2N7377 - VCB = 460V
P = 8 ± 2mm Hg for 60 s minimum
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows:
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test method 3131 of
MIL-STD-750. The following details shall apply:
a.
Collector current magnitude during power application shall be 0.833 A dc for both device types.
b.
Collector to emitter voltage magnitude shall be 20 V dc.
c.
Reference temperature measuring point shall be the case.
Reference point temperature shall be 25°C ≤ TR ≤ 75°C and recorded before the test is started.
d.
e.
Mounting arrangement shall be with heat sink to header.
Maximum limit of RθJC shall be 3.3°C/W.
f.
4.5.3 Inspection conditions. Unless otherwise specified in MIL-PRF-19500 or herein, all inspections shall be conducted at a case
temperature (TC) of +25°C ± 3°C.
4.5.4 Group B accelerated life test. This test shall be conducted using one of the two options listed herein (a and b) with the following
conditions applying to all options: VCB = 20 V minimum dc; 96 hours minimum;
TJ = +275°C.
a. PT adjusted to give a lot average of TJ = +275°C with TA = +125°C ± 25°C.
b. TA = +25°C ± 3°C with PT adjusted to give a lot average of TJ = +275°C.
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