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MIL-PRF-19500-611 Semiconductor Device, Transistor, Npn, Silicon, Power Switching Types 2N7374, 2N7375, 2N7376, And 2N7377, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power switching applications. Three levels of product assurance are provided as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14


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MIL-PRF-19500/611A
TABLE I. Group A inspection.
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MIL-STD-750
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Limits
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|  Inspection 1/
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| Symbol
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| Unit
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| Method |
Conditions
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| Min
| Max
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| Subgroup 3 - Continued
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| TA = -55°C
| Low-temperature
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| operation
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|  Forward-current
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| VCE = 5.0 V dc; IC = 1.0 A dc;
| hFE5
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|  transfer ratio
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| Pulsed (see 4.5.1)
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|  2N7374, 2N7376
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|  12
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|  2N7375, 2N7377
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8
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Subgroup 4
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| Magnitude of small-
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| VCE = 5 V dc; IC = 0.5 A dc;
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2.0  |
7.0
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| signal short- circuit
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| f = 10 MHz
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| forward- current
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| transfer ratio
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| Open circuit output
| 3236
| VCB = 10 V dc; IE = 0;
| Cobo
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|  120
| pf
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|100 kHz ≤ f ≤ 1 MHz
| capacitance
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| Pulse response:
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| µs
|  Turn-on time
| 3251
| Test condition A;
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0.25
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| IC = 1.0 A dc; VCC = 100 V dc
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|  2N7374, 2N7376
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| See figure 3
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|  2N7375, 2N7377
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| See figure 4
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| µs
| Turn-off time
| 3251
| Test condition A;
| toff
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| IC = 1.0 A dc; VCC = 100 V dc
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|  2N7374, 2N7376
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| See figure 3
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1.5
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|  2N7375, 2N7377
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| See figure 4
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2.0
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Subgroup 5
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| TC = +100°C, t ≥ 1 s; 1 cycle
| Safe operating area
| 3051
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| tr + tf = 10 µs (See figure 5)
| (continuous dc)
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Test 1 - All
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| VCE = 6 V dc; IC = 5 A dc
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Test 2 - All
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| VCE = 40 V dc; IC = 0.75 V dc
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| Test 3 - 2N7374, 2N7376
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| VCE = 200 V dc; IC = 43 mA dc
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| Test 4 - 2N7375, 2N7377
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| VCE = 300 V dc; IC = 21 mA dc
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See footnote at end of table.
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