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MIL-PRF-19500-611 Semiconductor Device, Transistor, Npn, Silicon, Power Switching Types 2N7374, 2N7375, 2N7376, And 2N7377, Jantx, Jantxv, And JansThis specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power switching applications. Three levels of product assurance are provided as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14


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MIL-PRF-19500/611A
TABLE I. Group A inspection.
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MIL-STD-750
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Limits
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|  Inspection 1/
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| Symbol
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| Unit
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| Method |
Conditions
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Min
| Max
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| Subgroup 1
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| Visual and mechanical
| 2071  |
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| examination
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| Subgroup 2
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| °C/W
| ZθJX
| Thermal impedance
| 3101  | See 4.4.1
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| 3.1
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| Collector to emitter
| 3011
| Bias condition D;
| V(BR)CEO
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| V dc
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| breakdown voltage
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| IC = 10 mA dc; Pulsed (see. 4.5.1)
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|  2N7374, 2N7376
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200
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|  2N7375, 2N7377
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300
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| Bias condition B; R1 = 100 Ω;
| Collector to emitter
| 3011
| V(BR)CER
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| V dc
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| breakdown voltage
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| IC = 10 mA dc; Pulsed (see. 4.5.1)
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|  2N7374, 2N7376
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250
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|  2N7375, 2N7377
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400
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| Bias condition D; IE = 10 µA dc
| Emitter to base
| 3026
| V(BR)EBO
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| V dc
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| breakdown voltage
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| µA dc
| Collector to emitter
| 3041
| Bias condition C
| ICES1
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0.2
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| cutoff current
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|  2N7374, 2N7376
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| VCE = 200 V dc
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|  2N7375, 2N7377
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| VCE = 300 V dc
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| Collector to base
| 3041
| Bias condition D
| ICBO
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| cutoff current
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| µA dc
|  2N7374, 2N7376
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| VCB = 200 V dc
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0.1
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| µA dc
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| VCB = 250 V dc
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1.0
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| µA dc
|  2N7375, 2N7377
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| VCB = 300 V dc
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0.1
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| µA dc
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| VCB = 400 V dc
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1.0
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| Forward-current
| 3076
| VCE = 2.0 V dc; IC = 0.5 A dc;
| hFE1
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| transfer ratio
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| Pulsed (see 4.5.1)
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|  2N7374, 2N7376
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40
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|  2N7375, 2N7377
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25
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See footnote at end of table.
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