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MIL-PRF-19500-615 Semiconductor Device, Filed Effect Radiation Hardened Transistors, P-Channel, Silicon, Types 2N7382 And 2N7383, Jantxv M, D, R, And F And Jans M, D, R, And FThis specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/615G
TABLE I. Group A inspection - Continued.
Limits
Symbol
Unit
Inspection 1/
Method
Condition
Min
Max
Subgroup 3
TC = TJ = +125°C
High temperature operation:
Bias condition C, VGS = ±20 V dc,
±200
Gate current
3411
IGSS2
nA dc
VDS = 0 V dc,
Drain current
3413
Bias condition C, VGS = 0 V dc,
IDSS2
-0.25
mA dc
VDS = 80 percent of rated VDS
Static drain to source
3421
VGS = -12 V dc, pulsed (see 4.5.1),
rDS(on)3
on-state resistance
ID = rated ID2
Ω
2N7382
0.54
Ω
2N7383
1.60
VDS ≥ VGS, ID = -1 mA
Gate to source voltage
3403
VGS(th)2
-1.0
V dc
(threshold)
TC = TJ = -55°C
Low temperature operation:
VDS ≥ VGS, ID = -1 mA
Gate to source voltage
3403
VGS(th)3
-5.0
V dc
(threshold)
Subgroup 4
Switching time test
3472
ID = rated ID1; VGS = -12 V dc;
Gate drive impedance = 7.5 Ω;
VDD = 50 percent of V(BR)DSS
Turn-on delay time
td(on)
30
ns
Rise time
tr
50
ns
Turn-off delay time
td(off)
2N7382
70
ns
2N7383
75
ns
Fall time
tf
2N7382
70
ns
2N7383
65
ns
Forward transconductance
3475
ID = ID2; VDD = -15 V dc, pulsed
gfs
(see 4.5.1)
2N7382
2.5
S
2N7383
2.0
S
See footnotes at end of table.
10



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