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MIL-PRF-19500-615 Semiconductor Device, Filed Effect Radiation Hardened Transistors, P-Channel, Silicon, Types 2N7382 And 2N7383, Jantxv M, D, R, And F And Jans M, D, R, And FThis specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/615G
TABLE II. Group D inspection - Continued.
Pre-irradiation
Post-irradiation
Post-irradiation
Inspection
Symbol
Units
limits
limits
limits
1/ 2/
Method
Conditions
M, D, R, and F
M, D, and R
F 4/
Min
Max
Min
Max
Min
Max
Subgroup 2 -
Continued
3421
rDSon1
Static drain to
VGS = -12 V,
source on-
condition A
state
pulsed (see 4.5.1)
resistance
ID= ID2
Ω
0.30
0.30
0.30
2N7382
Ω
0.80
0.80
0.80
2N7383
4011
VSD
Forward
VGS = 0 V,
voltage source
condition A
drain diode
ID = ID1
-3.0
-3.0
-3.0
V
2N7382
-5.0
-5.0
-5.0
V
2N7383
1/
For sampling plan see MIL-PRF-19500.
2/
Group D qualification may be performed anytime prior to lot formation. Wafers qualified to these group D QCI
requirements may be used for any other specification utilizing the same die design.
3/
Separate samples shall be pulled for each bias.
4/
The "F" designation represents devices which pass end-points at M, D, R, and F designated total-ionizing dose
(TID).
13



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