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MIL-PRF-19500-615 Semiconductor Device, Filed Effect Radiation Hardened Transistors, P-Channel, Silicon, Types 2N7382 And 2N7383, Jantxv M, D, R, And F And Jans M, D, R, And FThis specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/615G

TABLE I. Group A inspection.

MIL-STD-750

Limits

Symbol

Unit

Inspection 1/

Method

Condition

Min

Max

Subgroup 1

Visual and mechanical

2071

inspection

Subgroup 2

�C/W

Thermal impedance 2/

3161

See 4.3.3

ZθJC

Breakdown voltage,

3407

Bias condition C, VGS = 0V,

V(BR)DSS

drain to source

ID = -1 mA dc

2N7382

-100

V dc

2N7383

-200

V dc

VDS ≥ VGS, ID = -1 mA

Gate to source voltage

3403

VGS(th)1

-2.0

-4.0

V dc

(threshold)

Gate current

3411

Bias condition C, VGS = +20 V dc

IGSSF1

+100

nA dc

VDS = 0 V dc

Gate current

3411

Bias condition C, VGS = -20 V dc

IGSSR1

-100

nA dc

VDS = 0 V dc

�A dc

Drain current

3413

Bias condition C, VGS = 0 V dc,

IDSS1

-25

VDS = 80 percent of rated VDS

Static drain to source on-

3421

VGS = -12 V dc, condition A,

rDS(on)1

state resistance

pulsed (see 4.5.1), ID = rated ID2

(see 1.3)

Ω

2N7382

0.30

Ω

2N7383

0.80

Static drain to source on-

3421

VGS = -12 V dc, condition A,

rDS(on)2

state resistance

pulsed (see 4.5.1), ID = rated ID1,

(see 1.3)

Ω

2N7382

0.35

Ω

2N7383

0.92

Forward voltage

4011

VGS = 0 V dc, ID = rated ID1,

VSD

pulsed (see 4.5.1)

2N7382

-3.0

2N7383

-5.0

See footnotes at end of table.