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MIL-PRF-19500-615 Semiconductor Device, Filed Effect Radiation Hardened Transistors, P-Channel, Silicon, Types 2N7382 And 2N7383, Jantxv M, D, R, And F And Jans M, D, R, And FThis specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/615G
TABLE II. Group D inspection.
Pre-irradiation
Post-irradiation
Post-irradiation
Inspection
Symbol
Units
limits
limits
limits
1/ 2/
Method
Conditions
M, D, R, and F
M, D, and R
F 4/
Min
Max
Min
Max
Min
Max
Subgroup 1
Not applicable
TC = +25°C
Subgroup 2
1019
Steady-state
VGS = -12 V;
total dose
VDS = 0 V
irradiation
(VGS bias) 3/
1019
Steady-state
VGS = 0 V; VDS
total dose
= 80 percent of
irradiation
rated VDS (pre-
(VDS bias) 3/
irradiation)
End-point
subgroup 2
electricals
3407
V(BR)DSS
Breakdown
VGS = 0 V;
voltage, drain
ID = -1 mA; bias
condition C
to source
2N7382
-100
-100
-100
V dc
-200
-200
-200
V dc
2N7383
VDS ≥ VGS;
3403
VGS(th)
Gate to source
voltage
ID = -1 mA
(threshold) 3/
2N7382
-2.0
-4.0
-2.0
-4.0
-2.0
-5.0
V dc
-2.0
-4.0
-2.0
-4.0
-2.0
-5.0
V dc
2N7383
3411
IGSSF1
-100
-100
-100
nA dc
Gate current
Bias condition C
VGS = -20 V;
VDS = 0 V;
3411
IGSSR1
100
100
100
nA dc
Gate current
Bias condition C
VGS = +20 V;
VDS = 0 V;
µA dc
3413
IDSS
-25
-25
-25
Drain current
Bias condition C
VGS = 0 V;
VDS = 80 percent
of rated VDS (pre-
irradiation)
See footnotes at end of table.
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