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MIL-PRF-19500-615 Semiconductor Device, Filed Effect Radiation Hardened Transistors, P-Channel, Silicon, Types 2N7382 And 2N7383, Jantxv M, D, R, And F And Jans M, D, R, And FThis specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/615G
4.3 Screening (JANS and JANTXV levels). Screening shall be in accordance with table E-IV of MIL-PRF-19500,
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and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that
exceed the limits of table I herein shall not be acceptable.
Screen (see table E-IV
Measurement
JANS level
JANTXV levels
(1) (2)
(3)
Gate stress test (see 4.3.1)
Gate stress test (see 4.3.1).
Method 3470 of MIL-STD-750, (see 4.3.2)
Method 3470 of MIL-STD-750, (see 4.3.2)
(3)
optional
optional
(3) 3c
Method 3161 of MIL-STD-750, (see 4.3.3)
Method 3161 of MIL-STD-750, (see 4.3.3)
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IGSSF1, IGSSR1, IDSS1, subgroup 2 of table I
Subgroup 2 of table I herein.
herein.
Method 1042 of MIL-STD-750, test
Method 1042 of MIL-STD-750, test
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condition B
condition B
IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1,
IGSSF1, IGSSR1, IDSS1, rDS(on)1, VGS(th)1
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subgroup 2 of table I herein.
subgroup 2 of table I herein:
ĆIGSSF1 = ± 20 nA dc or ± 100 percent of
initial value, whichever is greater.
ĆIGSSR1 = ± 20 nA dc or ± 100 percent of
initial value, whichever is greater.
ĆIDSS1 = ± 25 ΅A dc or ± 100 percent of
initial value, whichever is greater.
Method 1042 of MIL-STD-750, test
Method 1042 of MIL-STD-750, test
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condition A, t = 240 hours
condition A
Subgroup 2 of table I herein;
Subgroups 2 and 3 of table I herein;
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ĆIGSSF1 = ± 20 nA dc or ± 100 percent of
ĆIGSSF1 = ± 20 nA dc or ± 100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆIGSSR1 = ± 20 nA dc or ± 100 percent of
ĆIGSSR1 = ± 20 nA dc or ± 100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆIDSS1 = ± 25 ΅A dc or ± 100 percent of
ĆIDSS1 = ± 25 ΅A dc or ± 100 percent of
initial value, whichever is greater.
initial value, whichever is greater.
ĆrDS(on)1 = ± 20 percent of initial value.
ĆrDS(on)1 = ± 20 percent of initial value.
ĆVGS(th)1 = ± 20 percent of initial value.
ĆVGS(th)1 = ± 20 percent of initial value.
For TO­257AA packages: Method 1081 of
For TO­257AA packages: Method 1081
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MIL-STD-750 (see 4.3.4), Endpoints:
of MIL-STD-750 (see 4.3.4), Endpoints:
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Subgroup 2 of table I herein.
Subgroup 2 of table I herein.
(1) At the end of the test program, IGSSF1, IGSSR1 and IDSS1 are measured.
(2) An out-of-family program to characterize IGSSF1, IGSSR1, IDSS1 and VGS(th)1 shall be invoked.
(3) Screening shall be performed anytime after temperature cycling, screen 3a; JANTXV level does
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not need to be repeated in screening requirements.
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