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MIL-PRF-19500-615 Semiconductor Device, Filed Effect Radiation Hardened Transistors, P-Channel, Silicon, Types 2N7382 And 2N7383, Jantxv M, D, R, And F And Jans M, D, R, And FThis specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/615G
TABLE I. Group A inspection - Continued.
Limits
Symbol
Unit
Inspection 1/
Method
Condition
Min
Max
Subgroup 5
Safe operating area test
3474
See figures 4 and 5
(high voltage)
tp = 10 ms, VDS = 80 percent of
rated V(BR)DSS
Electrical measurements
See table I, subgroup 2
Subgroup 6
Not applicable
Subgroup 7
Gate charge
3471
Condition B
On-state gate charge
Qg(on)
2N7382
45
nC
2N7383
45
nC
Gate to source charge
Qgs
2N7382
10
nC
2N7383
10
nC
Gate to drain charge
Qgd
2N7382
25
nC
2N7383
25
nC
di/dt ≤ -100 A/µs, VDD ≤ -50 V,
Reverse recovery time
3473
trr
ID = ID1, (see 1.3)
2N7382
250
ns
2N7383
400
ns
1/
For sampling plan, see MIL-PRF-19500.
2/
This test required for the following end-point measurements only:
Group B, subgroups 3 and 4 (JANS).
Group B, subgroups 2 and 3 (JANTXV).
Group C, subgroups 2 and 6.
Group E, subgroup 1.
11



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