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MIL-PRF-19500-615 Semiconductor Device, Filed Effect Radiation Hardened Transistors, P-Channel, Silicon, Types 2N7382 And 2N7383, Jantxv M, D, R, And F And Jans M, D, R, And FThis specification covers the performance requirements for a P-channel, radiation hardened, enhancement mode, MOSFET, power transistor intended for use in high density power switching applications. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500, with avalanche energy ratings \(EAS\) and maximum avalanche current \(IAS\). See 6.5 for JANHC and JANKC die versions.

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MIL-PRF-19500/615G
TABLE IV. Manufacturers characterization conditions.
Sample
Manufacture's
Inspection
plan
Cage
Method
Conditions
69210
SEE  1/
1080
See MIL-STD-750E method 1080.0 dated 20 November 2006.
3 devices
(Applicable to
devices with a
date code of  Electrical
IGSSF1, IGSSR1, and IDSS1 in accordance with table I, subgroup 2
June 1998
measurements
and older)
Fluence = 3E5 ±20 percent ions/cm2
SEE irradiation:
Flux = 2E3 to 2E4 ions/cm2/sec, temperature = +25°C ±5°C
2
Surface LET = 28 MeV-cm /mg ±5%,
range = 42.8 µm ±7.5%, energy = 283.3 MeV ±7.5%
2N7382
In-situ bias conditions:
VDS = -100 V and VGS = +10 V
VDS = -70 V and VGS = +15 V
VDS = -60 V and VGS = +20 V
(typical 4.53 MeV/nucleon at Brookhaven National Lab Accelerator)
2N7383
In-situ bias conditions:  VDS = -200 V and VGS = +15 V
(nominal 4.53 MeV/nucleon at Brookhaven National Lab Accelerator)
2
Surface LET = 37 MeV-cm /mg ±5%,
range = 39 µm ±5%, energy = 305 MeV ±5%
2N7382
In situ bias conditions:
VDS = -100 V and VGS = +5 V
VDS = -70 V and VGS = +10 V
VDS = -50 V and VGS = +15 V
VDS = -40 V and VGS = +20 V
(typical 3.77 MeV/nucleon at Brookhaven National Lab Accelerator)
2N7383
In situ bias conditions:
VDS = -200 V and VGS = +5 V
VDS = -160 V and VGS = +10 V
VDS = -75 V and VGS = +15 V
(nominal 3.77 MeV/nucleon at Brookhaven National Lab Accelerator)
2
Surface LET = 59.9 MeV-cm /mg ±5%,
range = 32.8 µm ±7.5%, energy = 345 MeV ±7.5%
2N72382
In situ bias conditions:  VDS = -60 V and VGS = 0 V
(typical 2.72 MeV/nucleon at Brookhaven National Lab Accelerator)
Electrical
IGSSF1, IGSSR1, and IDSS1 in accordance with table I, subgroup 2
measurements
Upon qualification, all manufacturers should provide the verification test conditions to be added to this table.
1/
IGSSF1, IGSSR1, and IDSS1 was examined before and following SEE irradiation to determine acceptability for each
bias condition. Other test conditions in accordance with table I, subgroup 2, may be performed at the
manufacturer's option.
21



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