MIL-PRF-19500-117 Semiconductor Devices, Diode, Silicon, Voltage Regulator, Types 1N962B- 1 Through 1N992B-1, And 1N962Bur-1 Through 1N992Bur-1, 1N962C-1 Through 1N992C-1, And 1N962Cur-1 Through 1N992Cur-1, And 1N962D-1 Through 1N992D-1, 1N962Dur-1 Through 1N992Dur-1, Jan, Jantx, Jantxv, Janhc And JankcThis specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for each unencapsulated device type.

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MIL-PRF-19500/117R

4.5.4 Temperature coefficient of regulator voltage (αVZ). The device shall be temperature stabilized with current

applied prior to reading regulator voltage at the specified ambient temperature as specified in 4.4.3, subgroup C8.

4.5.5 Scope display evaluation. Scope display evaluation shall be stable in accordance with method 4023 of

MIL-STD-750, condition A. Scope display may be performed on ATE (automatic test equipment) for screening only

with the approval of the qualifying activity. Scope display in table I, subgroup 4 shall be performed on a scope. The

reverse current over the knee shall be 500 μA peak.

4.5.6 Free air burn-in and life tests. The use of a current limiting or ballast resistor is permitted provided that each

DUT still sees as a minimum the IZ(min) described in 4.3.3 and that the minimum applied voltage, where applicable,

is maintained through-out the burn-in period. Use method 3100 of MIL-STD-750 to measure TJ (see figure 10).