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MIL-PRF-19500-117 Semiconductor Devices, Diode, Silicon, Voltage Regulator, Types 1N962B- 1 Through 1N992B-1, And 1N962Bur-1 Through 1N992Bur-1, 1N962C-1 Through 1N992C-1, And 1N962Cur-1 Through 1N992Cur-1, And 1N962D-1 Through 1N992D-1, 1N962Dur-1 Through 1N992Dur-1, Jan, Jantx, Jantxv, Janhc And JankcThis specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator diodes with voltage tolerances of 5 percent, 2 percent, and 1 percent. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. One level of product assurance is provided for each unencapsulated device type.

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MIL-PRF-19500/117R
TABLE I. Group A inspection.
Inspection 1/
Unit
MIL-STD-750
Symbol
Limits 2/
Method
Conditions
Min
Max
Subgroup 1
2071
Visual and mechanical
examination
Subgroup 2
V dc
Forward voltage
4011
IF = 200 mA dc.
VF
1N962 - 1N985 3/
1.1
1N986 - 1N992 3/
1.3
μA dc
IR1
Col. 12
Reverse current
4016
DC method, VR = column 11 of
table IV.
VZ
Regulator voltage
4022
IZ1 = column 5 of table IV,
Col. 3
Col. 4
V dc
see 4.5.2
°C/W
ZΘJX
Thermal impedance
3101
See 4.3.2
Subgroup 3
TA = 150°C
High temperature
operation
μA dc
Reverse current
4016
DC method, VR = column 11 of
IR2
Col. 13
table IV.
Subgroup 4
4051
IZ = column 5 of table IV.
ZZ
Col. 6
ohm
Small-signal reverse
ISIG = 10 percent of IZ rms.
breakdown impedance
IZK = 250 μA dc,
4051
ZZK
Col. 7
ohm
Small-signal reverse
ISIG = 25 μA rms.
breakdown impedance
Scope display
4023
See 4.5.5, n = 116, c = 0.
See footnotes at end of table.
11



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