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MIL-PRF-19500-156 Semiconductor Device, Diode, Silicon, Low Level Voltage-Reference Temperature Compensated, Types 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, And 1N940B-1, 1N935Bur-1, 1N937Bur-1, 1N938Bur-1, 1N939Bur-1, And 1N940Bur-1, Jan, Jantx, Jantxv, And Jans, Radiation Hardened \(Total Dose Only\) Types Jantxvm, D, L, R, F, G, H, Jansm, D, L, R, F, G, HThis specification covers the performance requirements for 9.0 volts ┬▒5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/156N
TABLE III. Group E inspection qualification and requalification (all product assurance levels).
Qualification conformance
MIL-STD-750
Inspection
inspection (sampling plan)
Method
Conditions
Subgroup 1
22 devices, c = 0
Temperature cycling
1051
500 cycles.
Electrical measurements
See table I, subgroup 2.
Subgroup 2
22 devices, c = 0
Steady-state operation life
1038
Condition B, 1,000 hours (see 4.3.1).
Electrical measurements
See table I, subgroup 2 herein.
Subgroup 3
3 devices, c = 0
Decap analysis
2101
Cross section and scribe and break.
Separate samples shall be used for each test.
Subgroups 4, 5, 6, and 7
Not applicable
Subgroup 8
45 devices
Step stress to destruction by increasing cycles
Resistance to glass
1057
or up to a maximum of 25 cycles.
cracking
TABLE IV. Reference voltage time stability.
MIL-STD-750
Limits
Unit
Inspection
Symbol
Conditions
Min
Max
TA = +100°C ±2°C (see 4.5.2 and
ΔVZ
Reference-voltage time
stability
4.5.3). IZ = 7.5 ±0.01 mA dc
1N935B-1, 1N935BUR-1
(0 to 340 hours)
7
mV dc
1N937B-1, 1N937BUR-1
7
mV dc
1N938B-1, 1N938BUR-1
6
mV dc
1N939B-1, 1N939BUR-1
5
mV dc
1N940B-1, 1N940BUR-1
3
mV dc
1N935B-1, 1N935BUR-1
(340 to 1,000 hours)
4
mV dc
1N937B-1, 1N937BUR-1
4
mV dc
1N938B-1, 1N938BUR-1
3
mV dc
1N939B-1, 1N939BUR-1
3
mV dc
1N940B-1, 1N940BUR-1
1
mV dc
10



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