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MIL-PRF-19500-156 Semiconductor Device, Diode, Silicon, Low Level Voltage-Reference Temperature Compensated, Types 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, And 1N940B-1, 1N935Bur-1, 1N937Bur-1, 1N938Bur-1, 1N939Bur-1, And 1N940Bur-1, Jan, Jantx, Jantxv, And Jans, Radiation Hardened \(Total Dose Only\) Types Jantxvm, D, L, R, F, G, H, Jansm, D, L, R, F, G, HThis specification covers the performance requirements for 9.0 volts ┬▒5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/156N
4.1.1 Sampling inspection. Sampling inspection shall be in accordance with MIL-PRF-19500 and as specified
herein, except that lot accumulation period shall be 3 months in lieu of 6 weeks.
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and 4.4.5
herein.
4.2.2 Radiation hardened devices. See MIL-PRF-19500 and 4.4.4 herein.
4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, appendix E and as specified herein. Specified electrical measurements shall be made in
accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen
JANS level
JANTXV and JANTX level
(see table E-IV of
MIL-PRF-19500)
1a
Required
Not required
1b
Required
Required (JANTXV only)
2
Not required
Not required
Required
Required
3a
Not applicable
Not applicable
3b
Not applicable
Not applicable
3c
4
Not applicable
Not applicable
5
Not applicable
Not applicable
6
Not applicable
Not applicable
7a
Not applicable
Not applicable
7b
Optional
Optional
8
Required
Not required
9
Not applicable
Not applicable
10
Not applicable
Not applicable
Required VZ, ZZ
Required VZ, ZZ
11
12
Required see 4.3.1
Required see 4.3.1
13
Required
Required
Subgroups 2 and 3 of table I herein; ΔZZ ≤
Subgroup 2 of table I herein; ΔZZ ≤ ±15 percent
of initial reading. TA = +25°C ±2°C, ΔVZ ≤
±15 percent of initial reading. At TA =
+25°C ±2°C, ΔVZ ≤ ±0.004 V dc from initial
±0.004 V dc from initial value for 1N935B-1,
1N935BUR-1, 1N937B-1, and 1N937BUR-1;
value for 1N935B-1, 1N935BUR-1,
ΔVZ ≤ ±0.003 V dc from initial value for
1N937B-1, and 1N937BUR-1;
ΔVZ ≤ ±0.003 V dc from initial value for
1N938B-1, 1N938BUR-1, 1N939B-1, and
1N939BUR-1; ΔVZ ≤ ±0.002 V dc from initial
1N938B-1, 1N938BUR-1, 1N939B-1, and
1N939BUR-1; ΔVZ ≤ ±0.002 V dc from
value for 1N940B-1, 1N940BUR-1
initial value for 1N940B-1, 1N940BUR-1
14a
Not applicable
Not applicable
14b
Required (1) (2)
Required (1) (2)
15
Required
Not required
16
Required
Not required
1/ See MIL-PRF-19500.
2/ For clear glass diodes, the hermetic seal (gross leak) may be performed at any time after temperature cycling.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: IZ = 7.5 mA dc, ±0.75 mA dc, T =
A
+150°C, +5°C, -0°C.
5



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