MIL-PRF-19500-156 Semiconductor Device, Diode, Silicon, Low Level Voltage-Reference Temperature Compensated, Types 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, And 1N940B-1, 1N935Bur-1, 1N937Bur-1, 1N938Bur-1, 1N939Bur-1, And 1N940Bur-1, Jan, Jantx, Jantxv, And Jans, Radiation Hardened \(Total Dose Only\) Types Jantxvm, D, L, R, F, G, H, Jansm, D, L, R, F, G, HThis specification covers the performance requirements for 9.0 volts ┬▒5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/156N

Dimensions

Symbol

Notes

Inches

Millimeters

Min

Max

Min

Max

.060

.107

1.52

2.72

.120

.300

3.05

7.62

.018

.023

0.46

0.58

1.000

1.500

25.40 38.10

LL1

0.050

1.27

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. Package contour optional within BD and length BL. Heat slugs, if any, shall be included within this cylinder but

shall not be subject to minimum limit of BD.

4. Within this zone, lead diameter may vary to allow for lead finishes and irregularities, other than heat slugs.

5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

FIGURE 1. Physical dimensions 1N935B-1, 1N937B-1 through 1N940B-1 (DO-7 and DO-35).