MIL-PRF-19500-156 Semiconductor Device, Diode, Silicon, Low Level Voltage-Reference Temperature Compensated, Types 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, And 1N940B-1, 1N935Bur-1, 1N937Bur-1, 1N938Bur-1, 1N939Bur-1, And 1N940Bur-1, Jan, Jantx, Jantxv, And Jans, Radiation Hardened \(Total Dose Only\) Types Jantxvm, D, L, R, F, G, H, Jansm, D, L, R, F, G, HThis specification covers the performance requirements for 9.0 volts ┬▒5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/156N

Dimensions

Symbol

Inches

Millimeters

Min

Max

Min

Max

.063

.067

1.60

1.70

ECT

.016

.022

0.41

0.56

.130

.146

3.30

3.70

.001 Min

0.03 Min

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.

FIGURE 2. Physical dimensions 1N935BUR-1, 1N937BUR-1 through 1N940BUR-1 (DO-213AA).

3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4 and table I herein.

3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and

4.4.3.

3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).