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MIL-PRF-19500-156 Semiconductor Device, Diode, Silicon, Low Level Voltage-Reference Temperature Compensated, Types 1N935B-1, 1N937B-1, 1N938B-1, 1N939B-1, And 1N940B-1, 1N935Bur-1, 1N937Bur-1, 1N938Bur-1, 1N939Bur-1, And 1N940Bur-1, Jan, Jantx, Jantxv, And Jans, Radiation Hardened \(Total Dose Only\) Types Jantxvm, D, L, R, F, G, H, Jansm, D, L, R, F, G, HThis specification covers the performance requirements for 9.0 volts ┬▒5 percent, silicon, low bias current, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/156N
TABLE I. Group A inspection.
MIL-STD-750
Limits
Inspection 1/
Symbol
Unit
Method
Conditions
Min
Max
Subgroup 1
2071
Visual and mechanical
examination
Subgroup 2
IZ = 7.5 ±0.01 mA dc (see 4.5.3)
VZ
8.55
9.45
V dc
Reference voltage
4022
IZ = 7.5 ±0.1 mA dc,
Small-signal
4051
20.0
ohms
ZZ
breakdown impedance
Isig = 0.75 mA ac
Subgroup 3
IZ = 7.5 ±0.01 mA dc, TA = -55°C,
ΔVZ
Voltage-temperature
stability
0°C, +25°C, +75°C, +150°C ±2°C
(see 4.5.1 and 4.5.3)
1N935B-1, 1N935BUR-1
184.0
mV dc
1N937B-1, 1N937BUR-1
37.0
mV dc
1N938B-1, 1N938BUR-1
19.0
mV dc
1N939B-1, 1N939BUR-1
9.0
mV dc
1N940B-1, 1N940BUR-1
3.7
mV dc
Subgroups 4, 5, and 6
Not applicable
Subgroup 7
μA
Reverse current
4016
DC method; VR = 6.0 V dc
IR
10.0
leakage
1/ For sampling plan, see MIL-PRF-19500.
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