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MIL-PRF-19500-159 Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage-Reference, Types 1N821-1, 1N823-1, 1N825-1, 1N827-1, And 1N829-1, 1N821Ur-1, 1N823Ur-1, 1N825Ur-1, 1N827Ur-1, And 1N829Ur-1, Jan, Jantx, Jantxv, Jans, Janhc And Jankc; Radiation Hardened \(Total Dose Only\) Types Jantxvm, D, L, R, F, G, H; Jansm, D, L, R, F, G, H; Janhcm, D, L, R, F, G, H; And Jankcm, ...This specification covers the performance requirements for 6.2 volts ┬▒5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type.

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MIL-PRF-19500/159P
4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Method
Conditions
Subgroup
B1
2026
As specified.
B1
1022
As specified.
B2
1056
Test Condition A, 25 cycles.
B2
4066
Not applicable.
B2
1071
Test condition E.
B3
1027
See 4.3.1.
B4
2075
As specified.
B5
Not applicable.
B6
1032
As specified.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) requirements shall be in
accordance with the applicable steps of table I, subgroup 2 herein.
4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500.
Method
Conditions
Subgroup
C1
2066
As specified.
C2
1056
Test Condition A, 25 cycles.
Lead tension: Test condition A; 4 pounds weight, t = 15 3 seconds. Lead
C2
2036
fatigue: Test condition E (lead tension and fatigue tests are not applicable to
surface mount "UR" version device).
C2
1071
Test condition E.
C2
1021
Omit initial conditioning.
C3
Not applicable.
C4
1041
As specified.
C5
Not applicable.
IZ = 7.5 mA dc, TA = +100C minimum. (see 4.5.2).
C6
1026
C7
Not applicable.
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