MIL-PRF-19500-159 Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage-Reference, Types 1N821-1, 1N823-1, 1N825-1, 1N827-1, And 1N829-1, 1N821Ur-1, 1N823Ur-1, 1N825Ur-1, 1N827Ur-1, And 1N829Ur-1, Jan, Jantx, Jantxv, Jans, Janhc And Jankc; Radiation Hardened \(Total Dose Only\) Types Jantxvm, D, L, R, F, G, H; Jansm, D, L, R, F, G, H; Janhcm, D, L, R, F, G, H; And Jankcm, ...This specification covers the performance requirements for 6.2 volts ┬▒5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type.

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MIL-PRF-19500/159P

Dimensions

Symbol

Inches

Millimeters

Min

Max

Min

Max

.0035

.0065

.088

.165

.0050

.0080

.127

.203

.0050

.0065

.127

.165

.0050

.0065

.127

.165

.0150

.0165

.381

.419

.0260

.0290

.660

.737

Design data

Metallization:

Circuit layout data:

Top:

Cathode . . . . . . Al

Anode. . . . . . . . .Al

Back . . . . . . . . . Au

For zener operation, cathode must be operated positive with respect to anode; must be electrically isolated

Al thickness . . . . . . . . 40,000� minimum

Gold thickness . . . . . 5,000� minimum

Chip thickness . . . . . . .010 inch (0.25 mm) �.002 inch (0.05 mm).

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information.

3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.

FIGURE 5. JANHC and JANKC (C-version) die dimensions.