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MIL-PRF-19500-159 Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage-Reference, Types 1N821-1, 1N823-1, 1N825-1, 1N827-1, And 1N829-1, 1N821Ur-1, 1N823Ur-1, 1N825Ur-1, 1N827Ur-1, And 1N829Ur-1, Jan, Jantx, Jantxv, Jans, Janhc And Jankc; Radiation Hardened \(Total Dose Only\) Types Jantxvm, D, L, R, F, G, H; Jansm, D, L, R, F, G, H; Janhcm, D, L, R, F, G, H; And Jankcm, ...This specification covers the performance requirements for 6.2 volts ┬▒5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type.

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MIL-PRF-19500/159P

TABLE I. Group A inspection.

Inspection 1/

Symbol

Unit

MIL-STD-750

Limits

Min

Max

Method

Conditions

Subgroup 1

Visual and mechanical

2071

examination

Subgroup 2

IZ = 7.5 0.01 mA dc

Reference voltage

4022

5.89

6.51

V dc

(see 4.5.3)

IZ = 7.5 0.01 mA dc,

Small-signal breakdown

4051

ohms

impedance

Isig = 0.75 mA ac

Subgroup 3

VZ

IZ = 7.5 0.01 mA dc,

Voltage temperature

stability

TA = -55C, 0C. +25C,

(see 4.5.1 and 4.5.3)

+75C, +100C 2C,

IZ = (see 1.4)

1N821-1,

mV dc

1N821UR-1

1N823-1,

mV dc

1N823UR-1

1N825-1,

mV dc

1N825UR-1

1N827-1,

mV dc

1N827UR-1

1N829-1,

mV dc

1N829UR-1

Subgroups 4, 5, and 6

Not applicable

Subgroup 7

A

Reverse current

4016

DC method; VR = 3.0 V dc

2.0

leakage

1/ For sampling plan, see MIL-PRF-19500.