MIL-PRF-19500-159 Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage-Reference, Types 1N821-1, 1N823-1, 1N825-1, 1N827-1, And 1N829-1, 1N821Ur-1, 1N823Ur-1, 1N825Ur-1, 1N827Ur-1, And 1N829Ur-1, Jan, Jantx, Jantxv, Jans, Janhc And Jankc; Radiation Hardened \(Total Dose Only\) Types Jantxvm, D, L, R, F, G, H; Jansm, D, L, R, F, G, H; Janhcm, D, L, R, F, G, H; And Jankcm, ...This specification covers the performance requirements for 6.2 volts ┬▒5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type.

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MIL-PRF-19500/159P

4.4.4 Group D inspection. Group D inspection shall be conducted in accordance with table E-VIII of

MIL-PRF-19500 and table II herein. Submitted lots for group D sample inspection must be constructed using one

homogeneous wafer lot for the zener and one wafer lot for the compensating die (die), as also described in the

submitted DSCC Design and Construction form 36D (see table II herein).

4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup tests in table E-IX of MIL-PRF-19500 and table III herein.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Voltage-temperature stability. The breakdown voltage of each diode type shall be measured and recorded at

each of the specified temperatures. The lowest measured voltage shall be subtracted from the highest measured

voltage for each diode. The difference value obtained shall not exceed the specified VZ per diode type.

4.5.2 Reference voltage time stability. The breakdown voltage shall be measured prior to life testing at 340 hours,

and at the conclusion of the life test. The 340-hour reading shall be compared with the 0-hour reading and the 1,000-

hour reading compared with the 340-hour reading. The change in breakdown voltage shall not exceed the limits

specified. The test temperature for breakdown voltage shall be the same as the specified ambient life test

temperature (see table IV herein).

4.5.3 Reference voltage. The test current shall be applied until thermal equilibrium is attained (15 seconds

minimum) prior to reading the reference voltage. For this test, the diode shall be suspended by its leads with

mounting clips whose inside edge is located between .375 inch (9.53 mm) and .500 inch (12.70 mm) inch from the

body and the mounting clips shall be maintained at the specified temperature. This measurement may be performed

after a shorter time following application of the test current than that which provides thermal equilibrium if correlation

to stabilized readings can be established to the satisfaction of the Government.