MIL-PRF-19500-159 Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage-Reference, Types 1N821-1, 1N823-1, 1N825-1, 1N827-1, And 1N829-1, 1N821Ur-1, 1N823Ur-1, 1N825Ur-1, 1N827Ur-1, And 1N829Ur-1, Jan, Jantx, Jantxv, Jans, Janhc And Jankc; Radiation Hardened \(Total Dose Only\) Types Jantxvm, D, L, R, F, G, H; Jansm, D, L, R, F, G, H; Janhcm, D, L, R, F, G, H; And Jankcm, ...This specification covers the performance requirements for 6.2 volts ┬▒5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type.

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MIL-PRF-19500/159P

Dimensions

Symbol

Inches

Millimeters

Min

Max

Min

Max

.063

.067

1.60

1.70

.130

.146

3.30

3.71

ECT

.016

.022

0.41

0.56

.001 Min

0.03 Min

NOTES:

1. Dimensions are in inches.

2. Millimeters are given for general information only.

3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology.

FIGURE 2. Physical dimensions, 1N821UR-1 through 1N829UR-1 (DO-213AA).