MIL-PRF-19500-159 Semiconductor Device, Diode, Silicon, Temperature Compensated, Voltage-Reference, Types 1N821-1, 1N823-1, 1N825-1, 1N827-1, And 1N829-1, 1N821Ur-1, 1N823Ur-1, 1N825Ur-1, 1N827Ur-1, And 1N829Ur-1, Jan, Jantx, Jantxv, Jans, Janhc And Jankc; Radiation Hardened \(Total Dose Only\) Types Jantxvm, D, L, R, F, G, H; Jansm, D, L, R, F, G, H; Janhcm, D, L, R, F, G, H; And Jankcm, ...This specification covers the performance requirements for 6.2 volts ┬▒5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Seven levels of radiation hardened \(total dose only\) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type.

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MIL-PRF-19500/159P

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500.

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500 and on figures 1, 2, 3, 4, and 5 herein.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.5 Diode construction. These devices shall be constructed in a manner and using material which enable the

diodes to meet the applicable requirements of MIL-PRF-19500 and this document.

3.5.1 Dash-one construction. Shall be as specified in MIL-PRF-19500.

3.5.2 JANS construction. Construction shall be dash-one, category I or II metallurgical bond in accordance with

MIL-PRF-19500.

3.5.3 JANHC and JANKC construction. JANHC and JANKC construction may differ in die size and bonding pad

layout provided the manufacturing technology is identical (example: diffused junction, alloy junction).

3.6 Marking. Marking shall be in accordance with MIL-PRF-19500.

3.6.1 Marking of "UR" version devices. For "UR" version devices only, all marking (except polarity) may be omitted

from the body, but shall be retained on the initial container.

3.7 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I.

3.8 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and

4.4.3.

3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4 VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4).

4.1.1 Sampling inspection. Sampling inspection shall be in accordance with MIL-PRF-19500 and as specified

herein, except that lot accumulation period shall be 3 months in lieu of 6 weeks.