MIL-PRF-19500-255 Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N2221A, 2N2221Al, 2N2222A, 2N2222Al, 2N2221Aua, 2N2222Aua, 2N2221Aub, 2N2222Aub, 2N2221Aubc, And 2N2222Aubc, 2N2221Aubn, 2N2222Aubn, 2N2221Aubcn, 2N2222Aubcn, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, ...This specification covers the performance requirements for NPN, silicon, switching transistors. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/255Y

4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

MIL-PRF-19500 "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows

JANS requirements; the JANHC follows JANTX requirements.

4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be

applied to achieve TJ = +135�C minimum using a minimum PD = 75 percent of PT maximum, TA ambient rated as

defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias

conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification

demonstrating equivalence is required. In addition, the manufacturing site's burn-in data and performance history will

be essential criteria for burn-in modification approval. Method 3100 of MIL-STD-750 to measure TJ shall be used.

4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with

method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD (and VC where

appropriate). The thermal impedance limit shall comply with the thermal impedance graph on figures 12, 13, 14, 15,

and 16 (less than or equal to the curve value at the same tH time) and shall be less than the process determined

statistical maximum limit as outlined in method 3131 of MIL-STD-750. See table III, subgroup 4 herein.

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as

specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened

devices shall be submitted to and pass the requirements of subgroups 1 and 2, of table I herein, inspection only (table

E-VIb, group B, subgroup 1 is not required to be performed since solderability and resistance to solvents testing is

performed in A1 herein.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I

herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions

specified for subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1. Electrical measurements (end-

points) and delta requirements shall be in accordance with table I, subgroup 2 and 4.5.3 herein: delta requirements

only apply to subgroups B4, and B5. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical

measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2

and shall be in accordance with table I, subgroup 2 and 4.5.3 herein.

4.4.2.1 Group B inspection (JANS), table E-VIa of MIL-PRF-19500.

Subgroup Method

Condition

VCB = 10 V dc, adjust device current, or power, to achieve a minimum ĆTJ of +100�C.

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VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure occurs,

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resubmission shall be at the test conditions of the original sample.)

Option 1: 96 hours minimum sample size in accordance with MIL-PRF-19500, table E-VIa,

adjust TA or PD to achieve TJ = +275�C minimum.

Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve a

TJ = +225�C minimum.