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MIL-PRF-19500-255 Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N2221A, 2N2221Al, 2N2222A, 2N2222Al, 2N2221Aua, 2N2222Aua, 2N2221Aub, 2N2222Aub, 2N2221Aubc, And 2N2222Aubc, 2N2221Aubn, 2N2222Aubn, 2N2221Aubcn, 2N2222Aubcn, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, ...This specification covers the performance requirements for NPN, silicon, switching transistors. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/255Y
1.3 Maximum ratings. Unless otherwise specified TA = +25°C. - Continued.
*
PT
PT
PT
PT
TA = +25°C
TC = +25°C
TSP(IS) =
TSP(AM) =
RθJA
RθJC
RθJSP(IS)
RθJSP(AM)
Types
+25°C (1) (2)
+25°C (1) (2)
(1) (2)
(1) (2)
(2) (3)
(2) (3)
(2) (3)
(2) (3)
°C/W
°C/W
°C/W
°C/W
W
W
W
W
2N2221A, AL
0.50
1
N/A
N/A
325
150
N/A
N/A
2N2222A, AL
0.50
1
N/A
N/A
325
150
N/A
N/A
2N2221AUA
(4) 0.50
N/A
1
1.5
(4) 325
N/A
110
40
2N2222AUA
(4) 0.50
N/A
1
1.5
(4) 325
N/A
110
40
2N2221AUB, UBC,
N/A
90
N/A
(4) 325
N/A
1
N/A
(4) 0.50
UBN and UBCN
2N2222AUB, UBC,
N/A
90
N/A
(4) 325
N/A
1
N/A
(4) 0.50
UBN and UBCN
(1)
For derating, see figures 7, 8, 9, 10, and 11.
(2)
See 3.3 for abbreviations.
(3)
For thermal impedance curves, see figures 12, 13, 14, 15, and 16.
(4)
For non-thermal conductive PCB or unknown PCB surface mount conditions in free air, substitute figures 8
and 13 for the UA, UB, UC, UBN, and UBCN package and use RθJA.
1.4 Primary electrical characteristics. Unless otherwise specified, TA = +25°C.
*
hFE at VCE = 10 V dc
Limits
hFE1
hFE2
hFE3
hFE4 (1)
hFE5 (1)
IC = 0. 1 mA dc
IC = 1.0 mA dc
IC = 10 mA dc
IC = 150 mA dc
IC = 500 mA dc
AL, UA, UB, UBC,
AL, UA, UB, UBC,
AL, UA, UB, UBC,
AL, UA, UB, UBC,
AL, UA, UB, UBC,
UBN, and UBCN
UBN, and UBCN
UBN, and UBCN
UBN, and UBCN
UBN, and UBCN
2N2221A, 2N2222A
2N2221A, 2N2222A
2N2221A, 2N2222A
2N2221A, 2N2222A
2N2221A, 2N2222A
Min
30
50
35
75
40
100
40
100
20
30
Max
150
325
120
300
Types
Limit
Switching (saturated)
/hfe/
Cobo
100 kHz ≤
f = 100 MHz
f ≤ 1 MHz
VCE = 20 V dc
ton
toff
VCB = 10 V dc
IC = 20 mA dc
See figure 17
See figure 18
IE = 0
pF
ns
ns
2N2221A, 2N2222A
Min
2.5
Max
8
35
300
AL, UA, UB, UBC,
UBN, and UBCN
Types
Limit
VBE(sat)2 (1)
VBE(sat)1 (1)
VCE(sat)2 (1)
VCE(sat)1 (1)
IC = 500 mA dc
IC = 150 mA dc
IC = 500 mA dc
IC = 150 mA dc
IB = 50 mA dc
IB = 15 mA dc
IB = 50 mA dc
IB = 15 mA dc
V dc
V dc
V dc
V dc
2N2221A, 2N2222A
Min
0.6
Max
0.3
1.0
1.2
2.0
AL, UA, UB, UBC,
UBN, and UBCN
(1) Pulsed see 4.5.1.
2



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