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MIL-PRF-19500-255 Semiconductor Device, Transistor, Npn, Silicon, Switching, Types 2N2221A, 2N2221Al, 2N2222A, 2N2222Al, 2N2221Aua, 2N2222Aua, 2N2221Aub, 2N2222Aub, 2N2221Aubc, And 2N2222Aubc, 2N2221Aubn, 2N2222Aubn, 2N2221Aubcn, 2N2222Aubcn, Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, ...This specification covers the performance requirements for NPN, silicon, switching transistors. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance are provided for each unencapsulated device type. Provisions for radiation hardness assurance \(RHA\) to eight radiation levels is provided for JANTXV, JANS, JANHC, and JANKC product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/255Y

4.4.3.2 Group C inspection (JAN, JANTX, and JANTXV), table E-VII of MIL-PRF-19500.

Subgroup

Method

Condition

2036

Test condition E; not applicable for UA, UB, UBC, UBN, and UBCN devices.

RθJA and RθJC only, as applicable (see 1.3 and 4.3.3) and in accordance with thermal

3131

impedance curves.

Not applicable.

4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any

inspection lot containing the intended package type and lead finish procured to the same specification which is

submitted to and passes table I tests herein for conformance inspection. When the final lead finish is solder or any

plating prone to oxidation at high temperature, the samples for C6 life test may be pulled prior to the application of

final lead finish. Testing of a subgroup using a single device type enclosed in the intended package type shall be

considered as complying with the requirements for that subgroup.

* 4.4.4 Group D inspection. Conformance inspection for hardness assured JANS and JANTXV types shall include

the group D tests specified in table II herein. These tests shall be performed as required in accordance with

MIL-PRF-19500 and method 1019 of MIL-STD-750, for total ionizing dose or method 1017 of MIL-STD-750 for

neutron fluence as applicable (see 6.2 herein), except group D, subgroup 2 may be performed separate from other

subgroups. Alternate package options may also be substituted for the testing provided there is no adverse effect to

the fluence profile.

4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified in table III herein. Electrical measurements (end-

points) shall be in accordance with table I, subgroup 2 herein; delta measurements shall be in accordance with the

applicable steps of 4.5.3.

4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.

4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except

the output capacitor shall be omitted.

4.5.3 Delta requirements. Delta requirements shall be as specified below:

Step

Inspection

MIL-STD-750

Symbol

Limit

Unit

Method

Conditions

ĆICB02

Collector-base cutoff

3036

Bias condition D,

100 percent of initial

VCB = 60 V dc

current

value or 8 nA dc,

(1)

whichever is greater.

ĆhFE4

�25 percent change

Forward current

3076

VCE = 10 V dc;

transfer ratio

IC = 150 mA dc;

(1)

from initial reading.

pulsed, see 4.5.1

(1) Devices which exceed the table I limits herein for this test shall not be accepted.