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MIL-PRF-19500-260 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A, And Ar Versions, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc, 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650, 1N1124Ra, 1N1126Ra, 1N1128Ra , 1N3649R, And 1N3650R, Jan OnlyThis specification covers the performance requirements for silicon semiconductor power rectifier diodes. Four levels of product assurance are provided for each encapsulated 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type. One level of product assurance is provided for each device type as specified in MIL-PRF-19500, for the 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650. For normal and reverse \(A, R, RA, and AR suffix\) type devices see 3.4.1.

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MIL-PRF-19500/260L
* TABLE I. Group A inspection.
MIL-STD-750
Inspection 1/
Symbol
Unit
Limits
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
inspection
Subgroup 2
Forward voltage
4011
1.35
V (pk)
IF = 38 A (pk) pulse; pulse width <
VF1
1N1202A, 1N1204A, 1N1206A,
8.5 ms, duty cycle < 2 percent pulse
1N3671A, 1N3673A
Forward voltage
4011
2.2
V (pk)
VF1
IF = 10 Adc (pulse):
1N1124A, 1N1126A, 1N1128A,
tp ≤ 8.5 msec;
1N3649, 1N3650
µA dc
Reverse current
4016
5
DC method, VR = rated VR(dc)
IR1
(see 1.3)
°C/W
3101
See 4.3.2
ZθJX
Thermal impedance
Subgroup 3
TC = 150°C
High temperature
operation:
Reverse current
4016
1
mA dc
DC method, VR = rated VR(dc)
IR2
1N1202A, 1N1204A, 1N1206A,
(see 1.3)
1N3671A, 1N3673A
µA dc
1N1124A, 1N1126A, 1N1128A,
4016
200
DC method, VR = rated VR(dc)
IR2
1N3649, 1N3650
(see 1.3)
TC = -65°C
Low temperature operation
Reverse current
4016
1
mA dc
DC method, VR = rated VR (dc)
IR3
1N1202A, 1N1204A, 1N1206A,
(see 1.3)
1N3671A, 1N3673A
Subgroups 4 and 5
Not applicable
Subgroup 6 2/
IF = IFSM , tP = 800 µs
Forward voltage
4011
2.5
V dc
VF2
Forward voltage
4011
2.3
V dc
IF = IFSM , tP < 8.3 ms
VF2
1/ For sampling plan, see MIL-PRF-19500.
2/ VF2 shall be performed with either tp = 800 µs or tp = 8.3 ms. This subgroup does not apply to 1N1124A, RA;
1N1126A, RA; 1N1128A, RA; 1N3649, R; and 1N3650, R.
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