MIL-PRF-19500-260 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A, And Ar Versions, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc, 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650, 1N1124Ra, 1N1126Ra, 1N1128Ra , 1N3649R, And 1N3650R, Jan OnlyThis specification covers the performance requirements for silicon semiconductor power rectifier diodes. Four levels of product assurance are provided for each encapsulated 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type. One level of product assurance is provided for each device type as specified in MIL-PRF-19500, for the 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650. For normal and reverse \(A, R, RA, and AR suffix\) type devices see 3.4.1.

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MIL-PRF-19500/260L

1.3 Maximum ratings. Unless otherwise specified, TC = +25�C - Continued.

(1) Derate linearly 2 percent of IO per degrees Celcius for TC = 150�C to TC = 200�C.

(2) The 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650 and reverse versions have been moved from MIL-S-19500/104,

which has been canceled, are now inactive for new design.

(3) Derate linearly 33 mA dc/�C for TC = 50�C to TC = 150�C.

2. APPLICABLE DOCUMENTS

2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This

section does not include documents cited in other sections of this specification or recommended for additional

information or as examples. While every effort has been made to ensure the completeness of this list, document

users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this

specification, whether or not they are listed.

2.2 Government documents.

2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a

part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are

those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-19500

Semiconductor Devices, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-750

Test Methods for Semiconductor Devices.

(Copies of these documents are available online at https://assist.daps.dla.mil/quicksearch/ or

https://assist.daps.dla.mil. or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,

Philadelphia, PA 19111-5094.)

* 2.3 Order of precedence. Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)

before contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500.

3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in

MIL-PRF-19500 and on figures 1 (DO-203AA, formerly DO�4) and figure 2 (JANHC and JANKC).

3.4.1 Normal and reverse (A, R, RA, and AR suffix) types. Reverse and normal types are identical except: The

normal types have the cathode connected to the stud and the reverse types have the anode connected to the stud.