MIL-PRF-19500-260 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A, And Ar Versions, Jan, Jantx, Jantxv, Jans, Janhc, And Jankc, 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650, 1N1124Ra, 1N1126Ra, 1N1128Ra , 1N3649R, And 1N3650R, Jan OnlyThis specification covers the performance requirements for silicon semiconductor power rectifier diodes. Four levels of product assurance are provided for each encapsulated 1N1202A, 1N1204A, 1N1206A, 1N3671A, 1N3673A device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type. One level of product assurance is provided for each device type as specified in MIL-PRF-19500, for the 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650. For normal and reverse \(A, R, RA, and AR suffix\) type devices see 3.4.1.

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MIL-PRF-19500/260L

* TABLE II. Group E inspection (all quality levels) for qualification and requalification only.

Inspection

MIL-STD-750

Sampling

plan

Method

Conditions

Subgroup 1

45 devices

c=0

100 cycles, 0�C to 100�C.

Thermal shock

1056

Electrical measurements

See table I, subgroup 2 herein.

Hermetic seal

1071

Electrical measurements

See table I, subgroup 2 and table III, step 1.

Subgroup 2

22 devices

c=0

1,000 hours.

Steady-state dc blocking

1048

life

See table I, subgroup 2 and table III, steps 1 and 2.

Electrical measurements

Subgroup 4

See table E-IX of MIL-PRF-19500, group E, subgroup 4.

Thermal impedance

curves

Subgroup 5

22 devices

c=0

Barometric pressure,

1001

Hg = rated Hg (see 1.3), t = 60 s, While the 22 devices,

reduced (altitude

c = 0; test is being performed, IR shall be monitored and

operation)

shall not exceed table I limits.

N/A

1N1202A, AR

400 V dc

1N1204A, AR

600 V dc

1N1206A, AR

800 V dc

1N3671A, AR

1,000 V dc

1N3673A, AR

Subgroup 6

Subgroup 7