The documentation and process conversion
INCH-POUND
measures necessary to comply with this revision
shall be completed by 24 August 2013.
MIL-PRF-19500/286K
24 May 2013
SUPERSEDING
MIL-PRF-19500/286J
28 October 2011
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
TYPES 1N4245 THROUGH 1N4249, JAN, JANTX, JANTXV, AND JANHC
These devices are inactive for new design, preferred devices are 1N5614, 1N5616,
1N5618, 1N5620, 1N5622 of MIL-PRF-19500/427.
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for silicon, power rectifier, medium-recovery
diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.3 Maximum ratings.
IFSM
Type
VR
VRWM
IO (1)
IO = 1.0 A dc
TA = 55°C (2)
tp = 8 ms
V dc
V (pk)
A dc
A (pk)
200
200
1.0
25
1N4245
400
400
1.0
25
1N4246
600
600
1.0
25
1N4247
800
800
1.0
25
1N4248
1N4249
1,000
1,000
1.0
25
Barometric
pressure
TSTG and TJ
ZθJX
trr
RΘJL
Types
(reduced)
at L = .375 inch
(9.53 mm)
°C
°C/W
°C/W
µs
mm Hg
8
1N4245
-65 to +175
42
4.5
5.0
8
1N4246
-65 to +175
42
4.5
5.0
8
1N4247
-65 to +175
42
4.5
5.0
33
1N4248
-65 to +175
42
4.5
5.0
1N4249
33
-65 to +175
42
4.5
5.0
See notes on next page.
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ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil. Since contact
information can change, you may want to verify the currency of this address information using the ASSIST
Online database at https://assist.dla.mil/.
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