MIL-PRF-19500-286 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N4245 Through 1N4249, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for silicon, power rectifier, medium-recovery diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/286K

* TABLE II. Group E inspection (all quality levels) for qualification and requalification only � Continued.

Inspection

Sampling

plan

Method

Conditions

Subgroup 8

4065

45 devices

Peak reverse power

Peak reverse power (PRM) = shall be characterized by the

c=0

supplier and the data shall be available to the Government.

Test shall be performed on each sublot.

Electrical

During the PRM test, the voltage (VBR) shall be monitored to

measurements

verify it has not collapsed. Any collapse in VBR during or

after the PRM test, or rise in leakage current (IR) after the

test, that exceeds IR1 in table I herein shall be considered a

failure to that level of applied PRM. Progressively higher

levels of PRM shall be applied until failure occurs on all

devices within the chosen sample size.

Subgroup 9

Resistance to glass

1057

Test condition B. Step stress to destruction by increasing

45 devices

cracking

cycles or up to a maximum of 25 cycles.

c=0

Subgroup 10

22 devices

IFSM = rated (see 1.3); ten surges of 8.3 ms each at 1 minute

c=0

intervals superimposed on IO = 1.0 A (see 1.3); VRWM =

Forward surge

4066

rated (see 1.3); TA = + 55�C.

Electrical measurement

See table I, subgroup 2.

1/ Test method 1056 of MIL-STD-750, condition D, using liquid nitrogen, may be used in lieu of test method 1051.

2/ For opaque glass diodes use test method 2068 of MIL-STD-750.