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MIL-PRF-19500-286 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N4245 Through 1N4249, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for silicon, power rectifier, medium-recovery diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/286K
* TABLE II. Group E inspection (all quality levels) for qualification and requalification only.
Inspection
Sampling
plan
Method
Conditions
Subgroup 1A
45 devices
c=0
20 cycles, except high temperature shall be 150°C and low
Temperature cycling
1/ 1051
temperature shall be -195°C.
(air to air)
Hermetic seal 2/
1071
Electrical
See table I, subgroup 2 and table III, steps 1 and 2.
measurements
Subgroup 1B
45 devices
c=0
500 cycles, condition C, -65°C to +175°C.
Temperature cycling
1051
(air to air)
Hermetic seal 2/
1071
Electrical
See table I, subgroup 2 and table III, steps 1 and 2.
measurements
Subgroup 2
22 devices
c=0
TA = +150°C; t = 1,000 hours +65, -0 hours; dc = 80 - 85
Steady-state dc
1048
percent rated VRWM (see 1.3).
blocking life
Electrical
See table I, subgroup 2 and table III, steps 1 and 2.
measurements
Subgroup 4
Thermal impedance
22 devices
Subgroup 5
c=0
Barometric pressure
1001
Pressure = 8 mm Hg for 1N4245, 1N4246, and 1N4247.
(reduced)
Pressure = 33 mm Hg for 1N4248 and 1N4249.
See footnotes at end of table.
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