For Parts Inquiries call (727) 344-9615
A Service Disabled Veteran Owned Small Business
© Copyright 2015 Integrated Publishing, Inc.

MIL-PRF-19500-286 Semiconductor Device, Diode, Silicon, Power Rectifier, Types 1N4245 Through 1N4249, Jan, Jantx, Jantxv, And JanhcThis specification covers the performance requirements for silicon, power rectifier, medium-recovery diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15


img
. . . . .
MIL-PRF-19500/286K
TABLE I. Group A inspection.
Inspection 1/
Symbol
Limits
Unit
Method
Conditions
Min
Max
Subgroup 1
Visual and mechanical
2071
inspection
Subgroup 2 2/
Thermal impedance
3101
See 4.3.2
ZθJX
4.5
°C/W
Forward voltage
4011
IF = 1 A dc (pulsed, see 4.5.5);
VF1
0.6
1.3
V (pk)
duty cycle = 2 percent
maximum
VF2
Forward voltage
4011
IF = 3 A (pk),
0.8
1.3
V (pk)
duty cycle ≤ 2 percent pulsed,
tp ≤ 8.3 ms
µA dc
Reverse current
4016
DC method; VR = rated
IR1
1.0
leakage
(see 1.3)
IR = 100 µA dc
Breakdown voltage
4021
V(BR)
1N4245
240
V
1N4246
480
V
1N4247
720
V
1N4248
960
V
1N4249
1,150
V
Subgroup 3
TA = +125°C
High temperature
operation:
µA dc
Reverse current
4016
DC method, VR = rated
IR2
150
leakage
(see 1.3)
TA = -55°C
Low temperature
operation:
IF = 3.0 A (pk), duty cycle ≤ 2
Forward voltage
4011
VF3
1.5
V dc
percent pulsed, tp ≤ 8.3 ms
See footnotes at end of table.
8



For Parts Inquires call Parts Hangar, Inc (727) 493-0744
© Copyright 2015 Integrated Publishing, Inc.
A Service Disabled Veteran Owned Small Business

© Copyright 2015 Integrated Publishing, Inc. Site Design & Marketing by Strategico.