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MIL-PRF-19500-313 Semiconductor Device, Transistor, Npn, Silicon, Low Power, Types 2N2432, 2N2432A, 2N2432Ub, 2N2432Aub, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for low power, high speed chopper, NPN silicon transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die.

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MIL-PRF-19500/313J

TABLE I. Group A inspection.

Inspection 1/

MIL-STD-750

Symbol

Limits

Unit

Method

Conditions

Min

Max

Subgroup 1 2/

Visual and mechanical

2071

n = 45 devices, c = 0

examination 3/

Solderability 3/ 4/

2026

n = 15 leads, c = 0

Resistance to solvents

1022

n = 15 devices, c = 0

3/ 4/ 5/

Temp cycling 3/ 4/

1051

Test condition C, 25 cycles.

n = 22 devices, c = 0

Heremetic seal 4/

1071

n = 22 devices, c = 0

Fine leak

Gross leak

Electrical

Table I, subgroup 2

measurements 4/

Precondition TA = +250�C at

2037

Bond strength 3/ 4/

t = 24 hrs or TA = +300�C at

t = 2 hrs n = 11 wires, c = 0

Decap internal visual design

2075

n = 4, c = 0.

verification 4/

Subgroup 2

�C/W

Thermal impedance

3131

See 4.3.3

ZθJX

Breakdown voltage collector to

3011

Bias condition D; IC = 10 mA dc;

V(BR)CEO

emitter

pulsed (see 4.5.1).

2N2432, 2N2432UB

V dc

2N2432A, 2N2432AUB

V dc

Collector to base cutoff current

3036

Bias condition D

ICBO1

�A dc

2N2432, 2N2432UB

100

VCB = 30 V dc

�A dc

2N2432A, 2N2432AUB

100

VCB = 45 V dc

Bias condition D; IE = 100 �A dc;

Breakdown voltage emitter to

3011

V(BR)ECO1

collector

IB = 0 (see 4.5.3).

2N2432, 2N2432UB

V dc

2N2432A, 2N2432AUB

V dc

Breakdown voltage emitter to

3011

V dc

V(BR)EC02

Bias condition D; IE = 10 mA dc;

collector

IB = 0; pulsed (see 4.5.1 and 4.5.3)

See footnotes at end of table.