MIL-PRF-19500-313 Semiconductor Device, Transistor, Npn, Silicon, Low Power, Types 2N2432, 2N2432A, 2N2432Ub, 2N2432Aub, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for low power, high speed chopper, NPN silicon transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die.

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MIL-PRF-19500/313J

* TABLE II. Group E inspection (all quality levels) - for qualification only.

Inspection

MIL-STD-750

Qualification

Method

Conditions

Subgroup 1

45 devices

c=0

1051

Test condition C, 500 cycles

Temperature cycling

(air to air)

1071

Hermetic seal

Fine leak

Gross leak

See table I, subgroup 2 and 4.5.7 herein.

Electrical measurements

Subgroup 2

45 devices

c=0

Intermittent life

1037

VCB = 10 V dc, 6,000 cycles, forced air cooling allowed on

cooling cycle only.

Electrical measurements

See table I, subgroup 2 and 4.5.7 herein.

Subgroup 4

3131

15 devices,

Thermal resistance

RθJSP can be calculated but shall be measured once in the

c=0

same package with a similar die size to confirm calculations

(may apply to multiple specification sheets).

Thermal impedance

See table E-IX of MIL-PRF-19500, group E, subgroup 4.

Sample size

curves

N/A

Subgroup 5

Not applicable

3 devices

Subgroup 6

1020

ESD

45 devices

Subgroup 8

c=0

Condition B

1033

Reverse stability