MIL-PRF-19500/313J
4.2.1 JANHC and JANKC devices. JANHC and JANKC devices shall be qualified in accordance with
MIL-PRF-19500.
4.2.2 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
* 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Measurement
Screen (see
table E-IV of
MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
(1) 3c
Thermal impedance, method 3131 of
Thermal impedance, method 3131 of
MIL-STD-750, see 4.3.3.
MIL-STD-750, see 4.3.3.
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Optional
Optional
9
ICBO2, hFE1
Not applicable
10
48 hours minimum
48 hours minimum
11
ICBO2; hFE1;
ICBO2, hFE1
ĆICBO2 = 100 percent of initial value or 5
nA dc, whichever is greater. ĆhFE1 = ±15
percent.
12
See 4.3.1
See 4.3.1
13
Subgroups 2 and 3 of table I herein;
Subgroup 2 of table I herein;
ĆICBO2 = 100 percent of initial value or
ĆICBO2 = 100 percent of initial value or
5 nA dc, whichever is greater;
5 nA dc, whichever is greater;
ĆhFE1 = ±15 percent.
ĆhFE1 = ±15 percent.
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Required
Required
(1) Shall be performed anytime after temperature cycling, screen 3a; and does not need to be repeated in
screening requirements.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc; power shall be
applied to achieve TJ = +135°C minimum using a minimum PD = 75 percent of PT maximum, TA ambient rated as
defined in 1.3. With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias
conditions, TJ, and mounting conditions) may be used for JANTX and JANTXV quality levels. A justification
demonstrating equivalence is required. In addition, the manufacturing site's burn-in data and performance history will
be essential criteria for burn-in modification approval.
4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500 "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
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