MIL-PRF-19500/356L
4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows
JANS requirements, the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of
MIL-PRF-19500, and table I herein. End-point electrical measurements shall be in accordance with the applicable
steps of table III herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500, and as
follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable
steps of table III herein.
4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup
Method
Conditions
0 to +100�C, 25 cycles, n = 22, c = 0.
B3
1056
-55 to +175�C, 100 cycles, n = 22, c = 0.
B3
1051
B4
1037
B5
1027
achieve TJ = +175�C minimum, t = 1,000 hours. Temporary leads may be
added for surface mount devices. n = 45, c = 0.
4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Conditions
0�C to +100�C, 10 cycles, c = 0, n = 22.
B2
1056
-55 to +175�C, 25 cycles, n = 22, c = 0.
B2
1051
B2
1071
Test condition E only. NOTE: For non-transparent devices, hermetic seal may be
performed after electrical measurements.
The test current IZ shall be adjusted to produce a junction temperature of +150�C
B3
1027
samples from the same lot may be used in lieu of the US suffix sample life test.
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