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MIL-PRF-19500-356 Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N4954 Through 1N4996, 1N5968, 1N5969,And 1N6632 Through 1N6637, 1N4954Us Through 1N4996Us, 1N5968Us, 1N5969Us, And 1N6632Us Through 1N6637Us, And C And D Tolerance Suffix Devices, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, voltage regulator diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

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MIL-PRF-19500/356L
4.3.3 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows
JANS requirements, the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of
MIL-PRF-19500, and table I herein. End-point electrical measurements shall be in accordance with the applicable
steps of table III herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in table E-VIA (JANS) and table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500, and as
follows. Electrical measurements (end-points) and delta requirements shall be in accordance with the applicable
steps of table III herein.
4.4.2.1 Group B inspection, table E-VIA (JANS) of MIL-PRF-19500.
Subgroup
Method
Conditions
0 to +100°C, 25 cycles, n = 22, c = 0.
B3
1056
-55 to +175°C, 100 cycles, n = 22, c = 0.
B3
1051
B4
1037
IZ = 40 percent of column 8 of table IV.
IZ = 35 percent of column 8 of table IV. Adjust either TA or IZ or both to
B5
1027
achieve TJ = +175°C minimum, t = 1,000 hours. Temporary leads may be
added for surface mount devices. n = 45, c = 0.
4.4.2.2 Group B inspection, table E-VIB (JAN, JANTX and JANTXV) of MIL-PRF-19500.
Subgroup
Method
Conditions
0°C to +100°C, 10 cycles, c = 0, n = 22.
B2
1056
-55 to +175°C, 25 cycles, n = 22, c = 0.
B2
1051
B2
1071
Test condition E only. NOTE: For non-transparent devices, hermetic seal may be
performed after electrical measurements.
The test current IZ shall be adjusted to produce a junction temperature of +150°C
B3
1027
minimum and IZ(min) ≥ 25 percent of column 8 (IZ) of table IV. Temporary leaded
samples from the same lot may be used in lieu of the US suffix sample life test.
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