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MIL-PRF-19500-356 Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N4954 Through 1N4996, 1N5968, 1N5969,And 1N6632 Through 1N6637, 1N4954Us Through 1N4996Us, 1N5968Us, 1N5969Us, And 1N6632Us Through 1N6637Us, And C And D Tolerance Suffix Devices, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, voltage regulator diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

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MIL-PRF-19500/356L
TABLE II. Group E inspection (all quality levels except die) - for qualification and requalification only.
MIL-STD-750
Inspection 1/ 2/
Sample plan
Method
Conditions
Subgroup 1
22 devices, c = 0
Thermal shock
1056
20 cycles, condition D except low temperature shall be
achieved using liquid nitrogen (-195�C). Perform a
visual inspection for cracked glass.
-65�C to +175�C, 500 cycles.
Temp cycling
1051
Hermetic seal
1071
Electrical measurements
See table III, steps 1, 2, 3, 4, 5, 6, and 7.
Subgroup 2
22 devices, c = 0
IZ = 40 percent of column 8 of table IV herein; TL =
Intermittent operation life
1037
+95�C minimum, L = .375 inch (9.53 mm),
ton = toff = 3 minutes minimum for 10,000 cycles. No
heat sink or forced air cooling on the devices shall be
permitted.
Electrical measurements
See table III, steps 1, 2, 3, 4, 5, 6, and 7.
Subgroup 4
N/A
See MIL-PRF-19500.
Thermal impedance
curves
Subgroup 5
22 devices, c = 0
Barometric pressure
1001
VR = column 11 of table IV herein, (1N4990 - 1N4996
(reduced)
only) pressure = 8 mm Hg.
Subgroup 6
Not applicable
Subgroup 8
Not applicable
Subgroup 9
n = 45
Resistance to glass
1057
Condition B. Step stress to destruction by increased
cracking
cycles or up to a maximum of 25 cycles.
1/ Unless otherwise specified, for sampling plan, see MIL-PRF-19500.
2/ A separate sample may be pulled for each test.
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