MIL-PRF-19500-356 Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N4954 Through 1N4996, 1N5968, 1N5969,And 1N6632 Through 1N6637, 1N4954Us Through 1N4996Us, 1N5968Us, 1N5969Us, And 1N6632Us Through 1N6637Us, And C And D Tolerance Suffix Devices, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, voltage regulator diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

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MIL-PRF-19500/356L

4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) and delta

requirements shall be in accordance with the applicable steps of table III herein.

* 4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500.

Subgroup

Method

Conditions

0�C to +100�C, 15 cycles, n = 22 c = 0.

1056

-55�C to +175�C, 25 cycles, n = 22 c = 0.

1051

Tension - test condition A; 20 lbs.; t = 15 s �3 s. Lead fatigue - test condition E.

2036

NOTE: Not applicable to US versions.

2038

US devices - Condition B, 20 pounds, t = 15s.

4081

The test current IZ shall be adjusted to produce a junction temperature of +150�C

1027

minimum and IZ(min) ≥ 25 percent of column 8 (IZ) of table IV. Temporary leaded

samples from the same lot may be used in lieu of the US suffix sample life test.

Not applicable.

IZ = column 5 of table IV, T1 = +25�C �5�C, T2 = +125�C �5�C. n = 22, c = 0. The

4071

maximum limits are column 13 of table IV. (See 4.5.4 herein.)

4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-points) shall

be as specified in table III.

4.4.4.1 JANHC and JANKC devices. Qualification for JANHC and JANKC devices shall be as specified in appendix G

of MIL-PRF-19500.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.

4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of

MIL-STD-750.

4.5.2 Regulator voltage (VZ). Regulator voltage shall be measured in accordance with method 4022 of

MIL-STD-750, except that the test shall be performed by the pulse method with tp = 0.2 ms to 300 ms. The thermal

equilibrium requirement does not apply. For JANHC and JANKC, this measurement shall be made with the chip

resting on a metal heat sink maintained at +25�C �3�C. For tight tolerance C and D suffix devices, see 3.7 herein.