MIL-PRF-19500-356 Semiconductor Device, Diode, Silicon, Voltage Regulator, Types 1N4954 Through 1N4996, 1N5968, 1N5969,And 1N6632 Through 1N6637, 1N4954Us Through 1N4996Us, 1N5968Us, 1N5969Us, And 1N6632Us Through 1N6637Us, And C And D Tolerance Suffix Devices, Jan, Jantx, Jantxv, Jans, Janhc, And JankcThis specification covers the performance requirements for silicon, voltage regulator diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.

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MIL-PRF-19500/356L

TABLE I. Group A inspection - Continued.

MIL-STD-750

Limits

Symbol

Unit

Inspection 1/

Method

Conditions

Min

Max

Subgroup 5

Not applicable

Subgroup 6

Surge current

4066

IZSM = column 10 of table IV herein;

IZSM

five surges, 1 per minute, 1/120

second duration superimposed on

IZ = column 5 of table IV (see 4.5.7).

End-point electrical

See table III, steps 1 and 2.

measurements

Subgroup 7

Voltage regulation

IZ = 10 percent to 50 percent of

VZ(reg)

Column

V dc

9 of

column 8 of table IV herein.

∝VZ

%/�C

Temperature coefficient

4071

JANS level only IZ = column 5 of

Column

of regulator voltage

13 of

table IV herein; T1 = +25�C �5�C;

T2 = +120�C ≤ T2 ≤ +130�C.

1/ For sampling plan, see MIL-PRF-19500.

2/ Not applicable to JANHC and JANKC devices.