MIL-PRF-19500-357 Semiconductor Device, Transistor, Pnp, Silicon, Amplifier, Types 2N3634 Through 2N3637, 2N3634Ub Through 2N3637Ub, 2N3634Ubn Through 2N3637Ubn, 2N3634L Through 2N3637L, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Jankca, Jankcam, Jankcad, Jankcap, Jankcal, Jankcar, Jankcaf, Jankcag, Jankcah, Janhcb, Jankcb, Jankcbm, Jankcbd,...This specification covers the performance requirements for PNP, silicon, low-power amplifier, and switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for unencapsulated devices. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/357M

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as

specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened

devices shall be submitted to and pass the requirements of table I, group A, subgroup 1, subgroup 2 inspection only.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table E-V of

MIL-PRF-19500 and table I herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in table E-VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points)

and delta requirements shall be in accordance with table I, group A, subgroup 2 and 4.5.4 herein. See 4.4.2.2 for

JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN,

JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with table I, group A, subgroup 2

and 4.5.4 herein.

4.4.2.1 Group B inspection, table E-VIa (JANS) of MIL-PRF-19500.

Subgroup

Method

Condition

VCB = 10 - 30 V dc; 2,000 cycles. No heat sink or forced-air cooling on devices shall be

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permitted.

VCB = 10 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a failure

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occurs, resubmission shall be at the test conditions of the original sample.)

Option 1: 96 hours minimum, sample size in accordance with table E-VIa of

MIL-PRF-19500 adjust TA or PD to achieve TJ = +275�C minimum.

Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve

TJ = +225�C minimum.

4.4.2.2 Group B inspection, table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Separate samples may

be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In

addition, all catastrophic failures during CI shall be analyzed to the extent possible to identify root cause and

corrective action. Whenever a failure is identified as wafer lot and /or wafer processing related, the entire wafer lot

and related devices assembled from the wafer lot shall be rejected unless an appropriate determined corrective

action to eliminate the failures mode has been implemented and the devices from the wafer lot are screened to

eliminate the failure mode.

Step

Method

Condition

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Steady-state life: 1,000 hours minimum, VCB = 10 V dc, power shall be applied to achieve

TJ = +150�C minimum using a minimum of PD = 75 percent of maximum rated PT as

defined in 1.3. n = 45 devices, c = 0. The sample size may be increased and the test time

decreased as long as the devices are stressed for a total of 45,000 device hours minimum,

and the actual time of test is at least 340 hours.

Blocking life, TA = +150�C, VCB = 80 percent of rated voltage, 48 hours minimum.

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n = 45 devices, c = 0.

High-temperature life (non-operating), t = 340 hours, TA = +200�C. n = 22, c = 0.

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