MIL-PRF-19500-357 Semiconductor Device, Transistor, Pnp, Silicon, Amplifier, Types 2N3634 Through 2N3637, 2N3634Ub Through 2N3637Ub, 2N3634Ubn Through 2N3637Ubn, 2N3634L Through 2N3637L, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Jankca, Jankcam, Jankcad, Jankcap, Jankcal, Jankcar, Jankcaf, Jankcag, Jankcah, Janhcb, Jankcb, Jankcbm, Jankcbd,...This specification covers the performance requirements for PNP, silicon, low-power amplifier, and switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for unencapsulated devices. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/357M

4.2.2 Group E qualification. Group E inspection shall be performed for qualification or requalification only. In

case qualification was awarded to a prior revision of the specification sheet that did not request the performance of

table III tests, the tests specified in table III herein that were not performed in the prior revision shall be performed on

the first inspection lot to this revision to maintain qualification.

4.3 Screening (JANTX, JANTXV, and JANS levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see

Measurement

table E-IV of

MIL-PRF-19500)

JANS level

JANTX and JANTXV levels

(1) 3c

Thermal impedance, method 3131 of

MIL-STD-750 (see 4.3.3).

ICBO2 and hFE5

Not applicable

24 hours minimum.

ICBO2 and hFE5

ĆICBO2 = 100 percent of initial value or

10 nA dc, whichever is greater;

ĆhFE5 = �15 percent of initial value.

See 4.3.2, 240 hours minimum.

Subgroups 2 and 3 of table I herein;

Subgroup 2 of table I herein;

ĆICBO2 = 100 percent of initial value or

10 nA dc, whichever is greater.

ĆhFE5 = �15 percent of initial value.

(1) Shall be performed anytime after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to

be repeated in screening requirements.

4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with

MIL-PRF-19500; "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows

JANS requirements; the JANHC follows JANTX requirements.

4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be

applied to achieve TJ = +135�C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3.

With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and

mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence

is required. In addition, the manufacturing site's burn-in data and performance history will be essential criteria for

burn-in modification approval.

* 4.3.3 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with

method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD (and VC where

appropriate). (See figures 9 through 11.) Measurement delay time (tMD) = 70 �s maximum. See table III, group E,

subgroup 4 herein.