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MIL-PRF-19500-357 Semiconductor Device, Transistor, Pnp, Silicon, Amplifier, Types 2N3634 Through 2N3637, 2N3634Ub Through 2N3637Ub, 2N3634Ubn Through 2N3637Ubn, 2N3634L Through 2N3637L, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Jankca, Jankcam, Jankcad, Jankcap, Jankcal, Jankcar, Jankcaf, Jankcag, Jankcah, Janhcb, Jankcb, Jankcbm, Jankcbd,...This specification covers the performance requirements for PNP, silicon, low-power amplifier, and switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for unencapsulated devices. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/357M
4.4.5 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements
(end-points) shall be in accordance with subgroup 2 of table I and 4.5.4 herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Input capacitance. This test shall be conducted in accordance with method 3240 of MIL-STD-750, except
the output capacitor shall be omitted.
4.5.3 Noise figure. Noise figure shall be measured using a model 310B Quan Tech Laboratories test set, or
equivalent. Conditions shall be as specified in table I herein.
4.5.4 Delta requirements. Delta requirements shall be as specified below:
Step
Inspection
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
ĆICB02
1
Collector-base cutoff
3036
Bias condition D,
100 percent of initial
value or ±20 nA dc,
current
VCB = 100 V dc
(1)
whichever is greater.
ĆhFE5
±25 percent change
2
Forward current
3076
VCE = 10 V dc;
transfer ratio
IC = 150 mA dc;
(1)
from initial reading.
pulsed see 4.5.1
(1) Devices which exceed the table I limits for this test shall not be accepted.
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