MIL-PRF-19500-357 Semiconductor Device, Transistor, Pnp, Silicon, Amplifier, Types 2N3634 Through 2N3637, 2N3634Ub Through 2N3637Ub, 2N3634Ubn Through 2N3637Ubn, 2N3634L Through 2N3637L, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Jankca, Jankcam, Jankcad, Jankcap, Jankcal, Jankcar, Jankcaf, Jankcag, Jankcah, Janhcb, Jankcb, Jankcbm, Jankcbd,...This specification covers the performance requirements for PNP, silicon, low-power amplifier, and switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for unencapsulated devices. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/357M

2.3 Order of precedence Unless otherwise noted herein or in the contract, in the event of a conflict between the

text of this document and the references cited herein, the text of this document takes precedence. Nothing in this

document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.

3. REQUIREMENTS

3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.

3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before

contract award (see 4.2 and 6.3).

3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as

specified in MIL-PRF-19500 and as follows.

RθJSP(AM) .............. Thermal resistance junction to solder pads (adhesive mount to PCB).

RθJSP(IS)................ Thermal resistance junction to solder pads (infinite sink mount to PCB).

3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in

MIL-PRF-19500, and figure 1, 2, and 3 herein.

3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.

Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).

3.5 Radiation hardness assurance (RHA). Radiation hardness assurance requirements, PIN designators, and

test levels shall be as defined in MIL-PRF-19500.

3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance

characteristics are as specified in 1.3, 1.4, and table I.

3.7 Electrical test requirements. The electrical test requirements shall be as specified in table I herein.

3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. The radiation hardened designator M, D, P,

L, R, F, G, or H shall immediately precede (or replace) the device "2N" identifier (depending upon degree of

abbreviation required).

3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and

shall be free from other defects that will affect life, serviceability, or appearance.

4. VERIFICATION

4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:

a. Qualification inspection (see 4.2).

b. Screening (see 4.3).

c. Conformance inspection (see 4.4 and tables I and II).

4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as

specified herein.

4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with

MIL-PRF-19500.