MIL-PRF-19500-357 Semiconductor Device, Transistor, Pnp, Silicon, Amplifier, Types 2N3634 Through 2N3637, 2N3634Ub Through 2N3637Ub, 2N3634Ubn Through 2N3637Ubn, 2N3634L Through 2N3637L, Jan, Jantx, Jantxv, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhca, Jankca, Jankcam, Jankcad, Jankcap, Jankcal, Jankcar, Jankcaf, Jankcag, Jankcah, Janhcb, Jankcb, Jankcbm, Jankcbd,...This specification covers the performance requirements for PNP, silicon, low-power amplifier, and switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for unencapsulated devices. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

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MIL-PRF-19500/357M

* TABLE III. Group E inspection (all quality levels) - for qualification only.

Inspection

MIL-STD-750

Qualification

Method

Conditions

Subgroup 1

45 devices

c=0

Temperature cycling

1051

Test condition C, 500 cycles

(air to air)

Hermetic seal

1071

Fine leak

Gross leak

See table I, subgroup 2 and 4.5.4 herein.

Electrical

measurements

Subgroup 2

45 devices

c=0

Intermittent life

1037

VCB = 10 V dc, 6,000 cycles. Adjust device current, or power, to

achieve a minimum ĆTJ of +100�C.

Electrical

See table I of subgroup 2 and 4.5.4 herein.

measurements

Subgroup 4

15 devices,

c=0

Thermal resistance

3131

RθJSP can be calculated but shall be measured once in the same

package with a similar die size to confirm calculations (may apply

to multiple specification sheets).

Thermal impedance

See MIL-PRF-19500, table E-IX, group E, subgroup 4.

Sample size

curves

N/A

Subgroup 5

Not applicable

Subgroup 6

11 devices

ESD

1020

Subgroup 8

45 devices

c=0

Reverse stability

1033

Condition B.