MIL-PRF-19500-382 Semiconductor Device, Transistor, Pnp, Silicon, Low-Power, Types 2N2944A, 2N2945A, 2N2945Am, And 2N2946A, 2N2944Aub, 2N2945Aub, 2N2945Aubm, And 2N2946Aub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, A...This specification covers the performance requirements for low-power, high-speed chopper, PNP, silicon transistors. A ┬æM┬Æ and UB┬ÆM┬Æ suffix will indicate a matched pair. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15

MIL-PRF-19500/382J

4.5.6 Delta requirements. Delta requirements shall be as specified below. (1) (2) (3) (4)

Step

Inspection

MIL-STD-750

Symbol

Limit

Unit

Method

Conditions

Bias condition D:

ĆICBO1

Collector to base

3036

100 percent of

IE = 0

cutoff current

initial value or

VCB = -15 V dc

2N2944A

.2 nA

VCB = -25 V dc

2N2945A, AM,

.2 nA

UB, and AUBM

VCB = -40 V dc

2N2946A

.5 nA

VEC = -0.5 V dc;

ĆhFE(inv)1

Forward-current

3076

25 percent of

IE = 200 �A dc;

transfer ratio

initial value.

(inverted

connection)

(1) The electrical measurements for table E-VIa (JANS) of MIL-PRF-19500 are as follows: Subgroup 5, see 4.5.6,

steps 1 and 2.

(2) The electrical measurements for 4.4.2.2 are as follows: See 4.5.6, steps 1 and 2.

(3) The electrical measurements for table E-VII of MIL-PRF-19500 are as follows: Subgroup 6, step 1 and step 2

(JANS).

(4) Group E table III herein, see 4.5.6, steps 1 and 2.