MIL-PRF-19500-382 Semiconductor Device, Transistor, Pnp, Silicon, Low-Power, Types 2N2944A, 2N2945A, 2N2945Am, And 2N2946A, 2N2944Aub, 2N2945Aub, 2N2945Aubm, And 2N2946Aub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, A...This specification covers the performance requirements for low-power, high-speed chopper, PNP, silicon transistors. A ┬æM┬Æ and UB┬ÆM┬Æ suffix will indicate a matched pair. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/382J

4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.

4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I

herein.

4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for

subgroup testing in E-VIa (JANS) of 19500 and 4.4.2.1 herein. Electrical measurements (end-points) requirements

shall be in accordance with table I, subgroup 2 herein. Delta requirements shall be in accordance with 4.5.6 herein.

See 4.4.2.2 herein for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points)

requirements shall be after each step in 4.4.2.2 and shall be in accordance with table I, subgroup 2 herein. Delta

requirements shall be in accordance with 4.5.6 herein.

4.4.2.1 Group B inspection (JANS), table E-VIa of MIL-PRF-19500.

Subgroup

Method

Condition

2037

Condition A.

1037

2,000 cycles. No heat sink or forced air cooling on the devices shall be

permitted. VCB = 10 V dc. ton = toff = 3 minutes, power = 400 mW.

VCB = 10 V dc. PD ≥ 100 percent of maximum rated PT (see 1.3). (NOTE: If a

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failure occurs, resubmission shall be at the test conditions of the original sample).

Option 1: 96 hours minimum, sample size in accordance with table VIa of

MIL-PRF-19500, adjust TA or PD to achieve TJ = +275�C minimum.

Option 2: 216 hours, sample size = 45, c = 0; adjust TA or PD to achieve

TJ = +225�C minimum.

4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV), table E-VIb of MIL-PRF-19500. Separate samples may

be used for each step. In the event of a lot failure, the resubmission requirements of MIL-PRF-19500 shall apply. In

addition, all catastrophic failures during CI (conformance inspection) shall be analyzed to the extent possible to

identify root cause and corrective action. Whenever a failure is identified as wafer lot and/or wafer processing

related, the entire wafer lot and related devices assembled from the wafer lot shall be rejected unless an appropriate

determined corrective action to eliminate the failures mode has been implemented and the devices from the wafer lot

are screened to eliminate the failure mode. Electrical end-points shall be in accordance with table I subgroup 2,

herein.

Step

Method

Condition

Steady-state life: 1,000 hours, VCB = 10 V dc, power shall be applied and ambient

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temperature adjusted to achieve TJ = +150�C minimum, and a minimum of PD = 75

percent of PT as defined in 1.3. n = 45, c = 0. The sample size may be increased and the

test time decreased as long as the devices are stressed for a total of 45,000 device hours

minimum, and the actual time of test is at least 340 hours.

Blocking life, TA = +150�C, VCB = 80 percent of rated voltage, 48 hours minimum.

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n = 45 devices, c = 0.

High- temperature life (non-operating), TA = +200�C, t = 340 hours, n = 22, c = 0.

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