MIL-PRF-19500-382 Semiconductor Device, Transistor, Pnp, Silicon, Low-Power, Types 2N2944A, 2N2945A, 2N2945Am, And 2N2946A, 2N2944Aub, 2N2945Aub, 2N2945Aubm, And 2N2946Aub, Jan, Jantx, Jantxv, Jans, Janhc, Jankc, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, A...This specification covers the performance requirements for low-power, high-speed chopper, PNP, silicon transistors. A ┬æM┬Æ and UB┬ÆM┬Æ suffix will indicate a matched pair. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Radiation hardness assurance \(RHA\) level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/382J

4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table E-IV of

MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I

herein. Devices that exceed the limits of table I herein shall not be acceptable.

Screen (see table E-IV

Measurement

of MIL-PRF-19500)

JANS

JANTX and JANTXV

(1) 3c

Required, method 3131 of MIL-STD-750.

Required, method 3131 of

MIL-STD-750. (see 4.3.3)

Not applicable

ICBO1 and hFE (inv)1

ICBO1; hFE (inv)1 ;

ICBO1 and hFE (inv)1

ĆICBO1 = 100 percent of initial value or

0.2 nA dc for 2N2944 and 2N2945,

0.5 nA dc for 2N2946

ĆhFE (inv)1 = 25 percent of initial value.

Subgroups 2 and 3 of table I herein;

Subgroups 2 of table I herein;

ĆICBO1 = 100 percent of initial value or

0.2 nA dc for 2N2944A, 2N2945A,

0.2 nA dc for 2N2944 and 2N2945,

2N2945AM, 2N2945AUB, and 2N2945AUBM.

0.5 nA dc for 2N2946;

ĆhFE (inv)1 = 25 percent of initial value.

0.5 nA dc for 2N2946A;

ĆhFE (inv)1 = 25 percent of initial value.

(1) Shall be performed any time after temperature cycling, screen 3a; JANTX and JANTXV levels do not need to

be repeated in screening requirements.

4.3.1 Screening (JANHC and JANKC). Screening for JANHC and JANKC die shall be in accordance with

MIL-PRF-19500 "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows

JANS requirements; the JANHC follows JANTX requirements.

4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 to 30 V dc. Power shall be

applied to achieve TJ = +135�C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3.

With approval of the qualifying activity and preparing activity, alternate burn-in criteria (hours, bias conditions, TJ, and

mounting conditions) may be used for JANTX and JANTXV quality levels. A justification demonstrating equivalence

is required. In addition, the manufacturing site's burn-in data and performance history will be essential criteria for

burn-in modification approval. Use method 3100 of MIL-STD-750 to measure TJ.

4.3.3 Thermal impedance. The thermal impedance measurements shall be performed in accordance with

method 3131 of MIL-STD-750 using the guidelines in that method for determining IM, IH, tH, tMD, (and VC where

appropriate).