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MIL-PRF-19500-392 Semiconductor Device, Transistor, Pnp, Silicon, Switching, Types 2N3485A And 2N3486A, Jan, Jantx, And JantxvThis specification covers the performance requirements for PNP silicon switching transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.

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MIL-PRF-19500/392J
* TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Symbol
Limit
Unit
Method
Conditions
Min
Max
Subgroup 2 - Continued.
Base-emitter voltage
3066
1.3
V dc
Test condition A; IC = 150 mA dc;
VBE(SAT)1
(saturated)
IB = 15 mA dc; pulsed (see 4.5.1).
Base-emitter voltage
3066
2.6
V dc
Test condition A; IC = 500 mA dc;
VBE(SAT)2
(saturated)
IB = 50 mA dc; pulsed (see 4.5.1).
Subgroup 3
TA = +150°C.
High-temperature
operation
µAdc
Collector-base cutoff
10
Bias condition D; VCB = 50 V dc.
ICBO3
current
TA = -55°C.
Low-temperature
operation
Forward-current transfer
3076
VCE = 10 V dc; IC = 1.0 mA dc.
hFE6
ratio
2N3485A
20
2N3486A
40
Subgroup 4
Small signal short circuit
3206
VCE = 10 V dc; IC = 1 mA dc;
hfe
forward current transfer
f = 1 kHz.
ratio
2N3485A
40
2N3486A
100
Magnitude of small signal
3306
2.0
10
VCE = 20 V dc; IC = 50 mA dc;
|hfe|
short-circuit forward-
f = 100 MHz.
current transfer ratio
Open circuit output
3236
VCB = 10 V dc; IE = 0;
Cobo
capacitance
8
pF
100 kHz ≤ f ≤ 1 MHz.
See footnotes at end of table.
10



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