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MIL-PRF-19500-399 Semiconductor Device, Transistor, Npn, Silicon, Switching Type 2N3960 And 2N3960Ub Jan, Jantx, Jantxv, Jantxvm, Jantxvd, Jantxvp, Jantxvl, Jantxvr, Jantxvf, Jantxvg, Jantxvh, Jans, Jansm, Jansd, Jansp, Jansl, Jansr, Jansf, Jansg, Jansh, Janhc, Janhcm, Janhcd, Janhcp, Janhcl, Janhcr, Janhcf, Janhcg, Janhch, Jankc, Jankcm, Jankcd, Jankcp, Jankcl, Jankcr, Jankcf, Jankcg, A...This specification covers the performance requirements for NPN silicon, switching transistors. Four levels of product assurance are provided for each device type and two levels for unencapsulated die as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. RHA level designators "M", "D", "P", "L", "R", "F", "G", and "H" are appended to the device prefix to identify devices which have passed RHA requirements.

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MIL-PRF-19500/399F
* TABLE II. Group D inspection and end-point limits ­ Continued.
Symbol
Unit
Inspection 1/ 2/ 3/
MIL-STD-750
Limits
Method
Conditions
Min
Max
Subgroup 2
Steady-state total dose
1019
Gamma exposure VCES = 9.6 V dc
irradiation
Breakdown voltage,
3011
Bias condition D; IC = 10 uA dc,
V(BR)CEO
12
V dc
collector to emitter
pulsed (see 4.5.1)
Collector to base cutoff
3036
Bias condition D,
ICBO
20
uA dc
current
VCB = 20 V
Emitter to base cutoff
3061
Bias condition D, VEB = 4.5 V dc
IEBO
20
ľA dc
current
Collector to emitter
3041
Bias condition A;
ICEX1
2.0
ľA dc
cutoff current
VCE = 10 V dc, VBE = 0.4 V dc
Collector to emitter
3041
Bias condition A;
ICEX2
10
nA dc
cutoff current
VCE = 10 V dc, VBE = 2.0 V dc
Forward-current transfer
3076
VCE = 1 V dc, IC = 1.0 mA dc
[hFE1]
[20] 5/
ratio
Forward-current transfer
3076
VCE = 1 V dc, IC = 10 mA dc,
[hFE2]
[30] 5/
300
ratio
pulsed (see 4.5.1)
VCE = 1 V dc, IC = 30 mA dc,
Forward-current transfer
3076
[hFE3]
[15] 5/
ratio
pulsed (see 4.5.1)
V dc
Collector to emitter
3071
0.23
IC = 1.0 mA dc; IB = 0.1 mA dc
VCE(sat)1
saturated voltage
V dc
Collector to emitter
3071
0.35
IC = 30 mA dc; IB = 3 mA dc,
VCE(sat)2
saturated voltage
pulsed (see 4.5.1)
V dc
Base emitter voltage
3066
0.92
Test condition B, VCE = 1.0 V dc,
VBE1
(non-saturated)
IC = 1.0 mA dc
V dc
Base emitter voltage
3066
1.15
Test condition B, VCE = 1.0 V dc,
VBE2
(non-saturated)
IC = 30 mA dc
1/
Tests to be performed on all devices receiving radiation exposure.
2/
For sampling plan, see MIL-PRF-19500.
3/
Electrical characteristics apply to all device types unless otherwise noted.
4/
See 6.2.e herein.
5/
See method 1019 of MIL-STD-750, for how to determine [hFE] by first calculating the delta(1/hFE) from the pre- and
post-radiation hFE. Note that [hFE] is not the same as hFE and cannot be measured directly. The [hFE] value can
never exceed the pre-radiation minimum hFE that it is based upon.
14



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